Publikationen und Beiträge zu internationalen Tagungen
Hier finden sich eine Auflistung meiner wissenschaftlichen Publikationen und Aktivitäten. Einen Überblick inklusive Zitationsstatistiken befindet sich hier. Der meinen Publikationen assoziierte Hirsch-Index ist im August 2022 lt. Web of Science h = 9, lt. Google Scholar h = 10. (Der Unterschied liegt darin, dass Google generell mehr Zitationen findet als das Web of Science. In meinem Fall wird bzgl. der entscheidenden Publikation im Web of Science eine Dissertation und ein Lehrbuch ignoriert, während Google sie dazuzählt.)
Dissertation
Optische und optoelektronische Eigenschaften von Nanostrukturen auf Basis breitlückiger Halbleiter
Joachim Kalden
Mensch und Buch Verlag, Berlin; zugleich Dissertation, Universität Bremen, 2010
ISBN: 978-3-86664-805-0
Offen gelegte Patente
Polarisationskontrolle in Projektionsbelichtungsanlagen sowie Anordnungen hierfür
J. Kalden
Deutsches Patent DE 10 2013 221 386
Messvorrichtung zur Bestimmung einer räumlichen Lage eines Beleuchtungslicht-Strahlengangs einer EUV-Projektionsbelichtungsanlage
J. Kalden, F. Baumer
Deutsches Patent DE 10 2017 212 622
Originalveröffentlichungen
Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures
B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R. Donfeu Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holy, T. Baumbach
Journal of Alloys and Compounds 585 572 – 579 (2014).
Modal gain and its Diameter Dependence on Single-ZnO Micro- and Nanowires
J.-P. Richters, J. Kalden, M. Gnauck, C. Ronning, C. P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski and T. Voss
Semiconductor Science and Technology 27 No. 1, 015005 (2012).
Light-emitting diode based on catalyst and mask-free grown N-polar GaN nanorods
G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A.Rosenauer, J. Kalden, K. Sebald, J. Gutowski,
M. Feneberg, I. Tischer, K. Fujan, K. Thonke, D. Hommel
Nanotechnology 22 No. 26, 265202 (2011).
Catalyst free self-organized high quality GaN nanorods
T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, D. Hommel
Physica Status Solidi (b) 248 No. 8, 1787 – 1799 (2011).
Optical properties of single InGaN quantum dots and their devices
K. Sebald, J. Kalden, H. Lohmeyer, J. Gutowski
Physica Status Solidi (b) 248 No. 8, 1777 – 1786 (2011).
Microphotoluminescence studies on {GaN-based} airpost pillar microcavities containing InGaN quantum wells and quantum dots
K. Sebald, H. Lohmeyer, J. Kalden, M. Seyfried, S. Figge, C. Kruse, H. Dartsch, C. Tessarek, D. Hommel, and J. Gutowski
Physica Status Solidi (b) 248 No. 8, 1756 – 1764 (2011).
Strong phase separation of strained InxGa1-xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel
Physical Review B 83, 115316 (2011)
Optical properties of InGaN quantum dots in monolithic pillar microcavities
K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel
Applied Physics Letters 96, 251906 (2010)
Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150K
J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski
Nanotechnology 21 No. 1, 015204 (2010)
Direct observation of correlations between individual photon emission events of a microcavity laser
J. Wiersig, C. Gies, F. Jahnke, M. Aßmann, T. Berstermann, M. Bayer, C. Kistner, S. Reitzenstein, C. Schneider, S. Höfling, A. Forchel, C. Kruse, J. Kalden, and D. Hommel
Nature 460, 245 – 249 (2009)
Highly ordered catalyst- and mask-free GaN nanorods on r-plane sapphire
T. Aschenbrenner, C. Kruse, G. Kunert, S. Figge, K. Sebald, J. Kalden, T. Voss, J. Gutowski and D. Hommel
Nanotechnology 20 No. 7, 075604 – 075609 (2009)
An electrically-driven CdSe quantum dot based resonant cavity light-emitting diode with single line emission
A. Gust, C. Kruse, K. Otte, D. Hommel, J. Kalden, T. Meeser, K. Sebald and J. Gutowski
Nanotechnology 20 No. 1, 015401 – 015404 (2009)
Fine tuning of quantum-dot pillar microcavities by focused ion beam milling
H. Lohmeyer, J. Kalden, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski
Applied Physics Letters 92, 011116 – 011118 (2008)
Hollow zinc oxide mesocrystals from an ionic liquid precursor
Z. Li, A. Geßner, J.-P. Richters, J. Kalden, T. Voss, C. Kübel, and A. Teubert
Advanced Materials 20 No. 7,1279 – 1285 (2008)
Beiträge zu internationalen Konferenzen
Vorträge
EUV optics at ZEISS: status, outlook, and future
Joachim Kalden, Jens Timo Neumann, Dirk Jürgens, Paul Gräupner, Wolfgang Seitz, Peter Kürz
SPIE Advanced Lithography & Patterning, February 26-29, 2024 in San Jose, CA, USA
Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII 129530Q (10 April 2024)
Hierarchic Maturity Model for Systems Performance Budgets
J. Kalden
INCOSE EMEASEC 2018
November 05 - 08, 2018 in Berlin, Germany
Properties of monolithic InGaN quantum dot pillar microcavities
K. Sebald, M Seyfried, J. Kalden, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, F. Jahnke, and J. Gutowski
9th International Workshop on Nitride Semiconductors – IWN 2010, September 19-24, 2010 in Tampa, Florida, USA
Physica Status Solidi (a) 208 No. 7, 1573–1575 (2011).
Diameter dependence of the modal gain of ZnO-nano- and microwires
J.-P. Richters, J. Kalden, J. Gutowski, T. Voss
MRS Fall Meeting 2010
November 29 - December 3, 2010 in Boston, Massachusetts, USA
Properties of monolithic InGaN quantum dot pillar microcavities
K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, F. Jahnke
9th International Workshop on Nitride Semiconductors – IWN 2010
September 19-24, 2010 in Tampa, Florida, USA
High-quality GaN nanorods: From catalyst free growth to an LED
T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden,
K. Sebald, J. Gutowski and D. Hommel
9th International Workshop on Nitride Semiconductors – IWN 2010
September 19-24, 2010 in Tampa, Florida, USA
invited talk:
Picosecond scale photon statistics of semiconductor nanostructures
M. Aßmann, F. Veit, T. Berstermann, M. Bayer, J. Wiersig, C. Gies, F. Jahnke, C. Kistner, C. Schneider, S. Höfling, S. Reitzenstein, L. Worschech, A. Forchel, C. Kruse, J. Kalden, D. Hommel, M. van der Poel, J. M. Hvam
30th International Conference on the Physics of Semiconductors – ICPS 30
July 25-30, 2010 in Seoul, South Korea
Electroluminescence from isolated single indium gallium nitride quantum dot up to 150 K
J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski
8th International Conference on Nitride Semiconductors – ICNS 8
October 18-23, 2009 in Jeju, South Korea
Physica Status Solidi (a) 207, 1428 – 1430 (2010)
Direct observation of correlations between individual photon emission events of a microcavity laser
M. Aßmann, T. Berstermann, J. Wiersig, C. Gies, F. Jahnke, , C. Kistner, S. Reitzenstein, C. Schneider, S. Höfling, A. Forchel, C. Kruse, J. Kalden, D. Hommel, and M. Bayer
11th International Conference on Optics of Excitons in Confined Systems – OECS 11
September 7-11, 2009 in Madrid, Spain
Methods to spectrally tune II-VI-based monolithic microcavities
K. Sebald, M. Seyfried, J. Kalden, H. Lohmeyer, C. Kruse, A. Gust, D. Hommel, and J. Gutowski
14th International Conference on II-VI Compounds – II-VI 2009
August 24-29, 2009 in St. Petersburg, Russia
Physica Status Solidi (b) 247, 1539 – 1542 (2010)
Catalyst-free growth of GaN nanocolumns on r-plane sapphire by molecular beam epitaxy
G. Kunert, C. Kruse, T. Aschenbrenner, S. Figge, and D. Hommel
K. Sebald, J. Kalden, T. Voss, and J. Gutowski
15th European Molecular Beam Epitaxy Workshop
March 8-11, 2009 in Zakopane, Poland
Optical properties and modal gain of InGaN quantum dot stacks
J. Kalden, K. Sebald, J. Gutowski, C. Tessarek, T. Aschenbrenner, S. Figge, D. Hommel
8th International Workshop on Nitride Semiconductors – IWN 2008
October 6-10, 2008 in Montreux, Switzerland
Physica Status Solidi (c) 6 No. S2, 590 – 593 (2009)
also available via arXiv.org
Optical properties of GaN nanorods grown catalyst-free on r-plane sapphire
K. Sebald, J. Kalden, T. Voss, J. Gutowski, T. Aschenbrenner, G. Kunert, C. Kruse, S. Figge, D. Hommel
8th International Workshop on Nitride Semiconductors – IWN 2008
October 6-10, 2008 in Montreux, Switzerland
Physica Status Solidi (c) 6 No. S2, 578 – 581 (2009)
Improved capping layer growth towards increased stability of InGaN quantum dots
C. Tessarek, T. Yamaguchi, S. Figge, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel
8th International Workshop on Nitride Semiconductors – IWN 2008
October 6-10, 2008 in Montreux, Switzerland
invited talk:
Quantum Dot Based Light Emitting Devices for Single Photon Emission Based on Nitrides and Selenides
D. Hommel, S. Figge, C. Kruse, A. Gust, C. Tessarek, K. Sebald, J. Kalden, T. Meeser, J. Gutowski, R. Arians, T. Kümmell, G. Bacher
International Symposium on Semiconductor Light Emitting Devices 2008
April 27-May 2, 2008 in Phoenix, Arizona, USA
Optical Properties of Single and Multi-Layer InGaN Quantum Dots
K. Sebald, H. Lohmeyer, S. Herlufsen, J. Kalden, J. Gutowski, C. Tessarek, T.
Yamaguchi, D. Hommel
7th International Conference of Nitride Semiconductors – ICNS 7
September 16-21, 2007 in Las Vegas, Nevada, USA
Physica Status Solidi (c) 5 No. 6, 1883 – 1885 (2008)
Integration of InGaN quantum dots into nitride-based microcavities
C. Kruse, S. Figge, H. Dartsch, C. Tessarek, D. Hommel, H. Lohmeyer, J. Kalden, K.
Sebald, J. Gutowski
7th International Conference of Nitride Semiconductors – ICNS 7
September 16-21, 2007 in Las Vegas, Nevada, USA
Physica Status Solidi (c) 5 No. 6, 2320 – 2322 (2008)
Properties and prospects of ZnSe-based quantum dot microcavity VCSEL structures
K. Sebald, H. Lohmeyer, J. Kalden, T. Meeser, J. Gutowski, C. Kruse, A. Gust, and D. Hommel
13th International Conference on II-VI Compounds – II-VI 2007
September 10-14, 2007 in Jeju, Korea
Journal of the Korean Physical Society 53, 83 – 87 (2008)
Posterpräsentationen
Enhancing The collection-efficiency of InGaN quantum dots in single photon emitters
S. Figge, H. Dartsch, C. Tessarek, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, M. Schowalter, K. Müller, A. Rosenauer, M. Florian, F. Jahnke
9th International Conference on Nitride Semiconductors – ICNS 9
July 10-15, 2011 in Glasgow, Scotland, UK.
Optical properties of InGaN quantum dots in monolithic pillar microcavities
M. Seyfried, J. Kalden, K. Sebald, H. Dartsch, C. Tessarek, S. Figge, C. Kruse, D. Hommel, J. Gutowski
30th International Conference on the Physics of Semiconductors – ICPS 30
July 25-30, 2010 in Seoul, South Korea
Optical properties of wide-bandgap monolithic pillar microcavities with different geometries
M. Seyfried, J.Kalden, K. Sebald, C. Kruse, A. Gust, C. Tessarek, D. Hommel, M. Florian, F. Jahnke, and J. Gutowski
10th International Conference on Nonlinear Optics and Excitation Kinetics in Semiconductors – NOEKS 10
August 16-19, 2010 in Paderborn, Germany
Electroluminescence from isolated single indium gallium nitride quantum dot up to 150 K
J. Kalden, K. Sebald, C. Tessarek, S. Figge, C. Kruse, D. Hommel, and J. Gutowski
6th International Conference on Quantum Dots – QD 2010
April 26-30, 2010 in Nottingham, UK
Methods for the realization of polarized light emission from CdSe/ZnSSe quantum dot monolithic pillar microcavities
M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, C. Kruse, D. Hommel
6th International Conference on Quantum Dots – QD 2010
April 26-30, 2010 in Nottingham, UK
Journal of Physics: Conference Series 245, 012058 (2010)
Influence of doping on optical properties of catalyst- and mask-free grown gallium nitride nanorods
J. Kalden, K. Sebald, G. Kunert, T. Aschenbrenner, C. Kruse, D. Hommel, and J. Gutowski
8th International Conference on Nitride Semiconductors – ICNS 8
October 18-23, 2009 in Jeju, South Korea
Physica Status Solidi (c) 7 No. 7-8, 2240 (2010)
Influence of electric fields on excitonic transitions in wide-bandgap semiconductor quantum dots
J. Kalden, S. Herlufsen, T. Meeser, K. Sebald, C. Tessarek, T. Aschenbrenner, A. Gust, C. Kruse, S. Figge, D. Hommel, and J. Gutowski
11th International Conference on Optics of Excitons in Confined Systems – OECS 11
September 7-11, 2009 in Madrid, Spain
Manipulating the optical Properties of CdSe/ZnSSe quantum dot based monolithic pillar microcavities
M. Seyfried, J. Kalden, H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski
11th International Conference on Optics of Excitons in Confined Systems – OECS 11
September 7-11, 2009 in Madrid, Spain
Journal of Physics: Conference Series 210, 012006 (2010)
Strategies for the Realization of Quantum Dot Based Micro-Cavities
S. Figge, C. Kruse, H. Dartsch, T. Aschenbrenner, D. Hommel, J. Kalden, K. Sebald, and J. Gutowski
8th International Workshop on Nitride Semiconductors – IWN 2008
October 6-10, 2008 in Montreux, Switzerland
Incorporation of temperature stable QD ensembles in separate confined heterostructures for long wavelength laser emission
T. Aschenbrenner, C. Tessarek, S. Figge, D. Hommel, J. Kalden, K. Sebald, and J. Gutowski
8th International Workshop on Nitride Semiconductors – IWN 2008
October 6-10, 2008 in Montreux, Switzerland
Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots
K. Sebald, J. Kalden, S. Herlufsen, H. Lohmeyer, C. Tessarek, T. Yamaguchi, S. Figge, D. Hommel, J. Gutowski
5th International Conference on Semiconductor Quantum Dots – QD 2008
Physica Status Solidi (c) 6 No. 4, 872 – 875 (2009)
Fine tuning of CdSe quantum-dot based microcavities
K. Sebald, H. Lohmeyer, J. Kalden, T. Meeser, C. Kruse, A. Gust, D. Hommel, and J. Gutowski
5th International Conference on Semiconductor Quantum Dots – QD 2008
May 11-16, 2008 in Gyeongju, Korea
Emission properties of ZnSe-based pillar microcavities at elevated temperatures
J. Kalden, H. Lohmeyer, K.Sebald, T. Meeser, J. Gutowski, C. Kruse, A. Gust, D. Hommel, J. Wiersig, and F. Jahnke
9th International Conference on Nonlinear Optics and Excitation Kinetics in Semiconductors – NOEKS 9
May 25-29, 2008 in Klink/Müritz, Germany
Physica Status Solidi (c) 6 No. 2, 508 – 511 (2009)
Haftungsausschluss:
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